20N60A4 v, SMPS Series N-channel Igbts. The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs. Datasheet Transistor 20n60a4 – Download as PDF File .pdf) or read online. datasheet pdf data sheet FREE from Datasheet (data sheet) P20N60A4 20N60A4 0N60A4 N60A4 60A4 0A4 A4 4 HGTP20N60A4.
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Devices should never be inserted into or removed from circuits with power on. IGBTs can be handled safely if the following basic precautions are taken: The sum of device switching and conduction losses must not.
20N60A4 PDF Datasheet浏览和下载
Gate Termination – The gates of these devices are essentially capacitors. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup.
Insulated Gate Bipolar Transistors are susceptible to. Operating Frequency Information Operating frequency information for a typical device Figure 3 is presented as a guide for estimating device performance for a specific application. The operating frequency plot Figure 3 of a typical.
If gate daasheet is required an external Zener is recommended. Other typical frequency vs collector current I CE plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and Devices should never be inserted into or removed from. Home – IC Supply – Link.
20N60A4 equivalent datasheet & applicatoin notes – Datasheet Archive
When handling these devices. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature.
Exceeding the rated V GE can result in permanent damage to the oxide layer in the gate region. With proper handling and application procedures, however, IGBTs are currently being extensively used in production datasjeet numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge.
Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM.
The information is based on measurements of a. Circuits that leave the gate. When devices are removed by hand from their carriers, the hand being used should be grounded by darasheet suitable means – for example, with a metallic wristband. Tips of soldering irons should be grounded.
IGBT+20n60a4 datasheet & applicatoin notes – Datasheet Archive
The sum of device switching and conduction losses must not exceed Ratasheet D. Circuits that leave the gate open-circuited or floating should be avoided. Figure 3 is presented as a guide for estimating device. All tail losses are included in the calculation for E OFF ; i. Gate Protection – These devices do not have an internal monolithic Zener diode from gate to emitter.
All tail losses are included in the. Prior to assembly into a circuit, all leads should be kept.
When devices are removed by hand from their carriers. Operating frequency information for a typical device.
Device turn-off delay can establish an additional frequency. Other definitions are possible. With proper handling and application.